NCEPower
NCEPower focuses on the development, design and sales of MOSFET, IGBT and other semiconductor chips and power devices with high quality and complete series of products, which are widely used in consumer electronics, automotive electronics, industrial electronics, new energy vehicles and charging piles, intelligent equipment manufacturing, rail transportation, photovoltaic new energy, 5G and other fields; in the future, with the vigorous development of cloud computing, big data, smart grid, driverless and other fields, the company's products will play an important role in these emerging fields.
Product Line
IGBT
Through process and device structure optimization, NCEPower is able to provide highly energy-efficient IGBT products. The clever trade-off between on-state voltage drop and switching losses enables significant improvements in system efficiency. At the same time, the series products have good and stable short-circuit capability, excellent low electromagnetic interference characteristics, and reliable switching speed control power, providing designers with sufficient guarantees in system reliability design. Different series (such as B series, W series, etc.) are widely used in various fields.
The current generation - seventh generation microchannel field cutoff technology IGBT products use advanced microchannel technology to significantly increase the cell structure density of the device, and also use the optimized carrier storage design, multi-gradient backside buffer layer design and ultra-thin drift area process technology to significantly improve the device current density, taking 650V products as an example, the product current density can be increased to For example, the current density of 650V products can be increased to 550A/cm2 or more, which can reach the same level of performance as international technology generation products. The saturation voltage drop and switching loss of the device are greatly reduced, and the device compromise characteristics are greatly optimized. 650V meets the typical value of medium frequency IGBT saturation voltage drop of only 1.35V. In addition, this series of products optimizes the switching characteristics of the device by introducing multi-gradient back buffer layer design, which provides more margin for system design. The series are all manufactured on large-size IGBT wafer fabrication platforms, achieving a comprehensive combination of excellent device electrical characteristics and highly consistent parameter stability.
- Excellent on-state voltage drop
- Extremely short trailing current
- Excellent short-circuit performance
Please contact us for more information
Martin：460874399
Email:
merrillchip@live.cn
Phone:
+86 - 15002073447 Martin +86 - 13688844543 Ann